SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a high work function and to reduce deterioration in NBTI reliability with respect to a semiconductor device having a high dielectric insulating film and a metal gate electrode.SOLUTION: The semiconductor device 100 has the metal gate electrode 110 formed on a substrate 101 with the high dielectric gate insulating film 109 interposed. Halogen elements segregate on an interface between the high dielectric gate insulating film 109 and metal gate electrode 110 on the side of the metal gate electrode 110.