| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor inspection device and a semiconductor inspection method for accurately estimating the characteristics of defects generated in a semiconductor manufacturing process.SOLUTION: At first, a correspondence relation (first calibration line) between a potential voltage contrast and the electric characteristics of a defective section is searched (S120 to S125), by using a reference material having a defective section whose configurations are known. Also, the electric characteristics of a normal section in a wafer to be inspected are measured. Then, a relation (second calibration line) between the potential voltage contrast of the defective portion in a wafer to be inspected and the electrical characteristics is calculated (S126 to S131), by adding the defect whose configurations are known to the normal portion of the wafer to be inspected based on the electrical characteristics of the normal portion of the wafer to be inspected and the first calibration line. By performing actual measurement of the potential voltage contrast of the defective portion, it is possible to inspect the electric characteristics of the defective section actually included in a wafer to be inspected, by using the second calibration line (S132 to S133). |
