发明名称 |
SEMICONDUCTOR-ON-INSULATOR WITH BACK SIDE BODY CONNECTION |
摘要 |
Embodiments of the present invention provide for the removal of excess carriers from the body of active devices in semiconductor-on-insulator (SOI) structures. In one embodiment, a method of fabricating an integrated circuit is disclosed. In one step, an active device is formed in an active layer of a semiconductor-on-insulator wafer. In another step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In another step, an insulator material is removed from a back side of the SOI wafer to form an excavated insulator region. In another step, a conductive layer is deposited on the excavated insulator region. Depositing the conductive layer puts it in physical contact with a body of an active device in a first portion of the excavated insulator region. The conductive layer then couples the body to a contact in a second detached portion of the excavated insulator region. |
申请公布号 |
WO2011008895(A1) |
申请公布日期 |
2011.01.20 |
申请号 |
WO2010US42028 |
申请日期 |
2010.07.14 |
申请人 |
IO SEMICONDUCTOR;STUBER, MICHAEL A.;MOLIN, STUART B.;NYGAARD, PAUL A. |
发明人 |
STUBER, MICHAEL A.;MOLIN, STUART B.;NYGAARD, PAUL A. |
分类号 |
H01L21/84;H01L21/336;H01L27/12;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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