INTEGRATED POWER SUPPLIES AND COMBINED HIGH-SIDE PLUS LOW-SIDE SWITCHES

摘要

The present application discloses new approaches to integrated power. Two new classes of structures each provide an integrated phase leg, in a process which can easily be integrated with low-voltage and/or peripheral circuits: in one class of disclosed structures, a lateral PMOS device is combined with an NMOS device which has predominantly vertical current flow. In another class of embodiments, a predominantly vertical n-channel device is used for the low-side switch, in combination with a lateral n- channel device. In either case, the common output node is preferably brought out at a backside contact. This device structure is advantageously used to construct complete power supply and/or voltage conversions circuits on a single chip (perhaps connected to external passive reactances).