METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM

摘要

The method for manufacturing a polycrystalline silicon thin film according to the present invention comprises: a metallic layer formation step for forming a metallic layer on an insulation substrate; a first silicon layer formation step for laminating a silicon layer on the metallic layer formed during said metallic layer formation step; a first heat treatment step for performing heat treatment for allowing metal catalyst atoms to be transferred from said metallic layer to said silicon layer to form a silicide layer; a second silicon layer formation step for laminating an amorphous silicon layer on said silicide layer; and a crystallization step for performing heat treatment to form crystalline silicon on said amorphous silicon layer by using particles of said silicide layer as a mediator.