METAL INTERCONNECTION METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal wiring forming method of a semiconductor device, capable of preventing the formation of a void is provided to prevent the hillock of a copper wiring due to the thermal and mechanical stresses by implementing heat process twice. CONSTITUTION: A copper layer is formed on a semiconductor substrate(S1). The copper layer is heat-treated in a first temperature(S2). The copper layer is heat-treated in a second temperature(S3). The copper wiring is formed by patterning the copper layer(S4). An anti oxidation layer is formed on the copper wiring in the third temperature(S5).