| 摘要 |
PROBLEM TO BE SOLVED: To provide a means of improving the degree of freedom of wiring on a surface of a semiconductor device.SOLUTION: The semiconductor device 1A includes a semiconductor chip 11 having an electrode 12, a first insulating film 30 provided with first wiring 33 to be electrically connected to the electrode 12 and having the semiconductor chip 11 fixed on one surface, a second insulating film 80 disposed opposite the surface of the first insulating film 30 where the semiconductor chip 11 is fixed, and provided with second wiring 83, a post 40 provided on one of opposite surfaces of the first insulating film 30 and second insulating film 80 and on the semiconductor chip 11 side, and made of a conductor electrically connecting the first wiring 33 and the second wiring 83 to each other, and a sealing layer 70 provided between the first insulating film 30 and the second insulating layer 80 and sealing the semiconductor chip 11 and the post 40. |
