VIA GOUGED INTERCONNECT STRUCTURE, AND METHOD OF FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an interconnect structure including a gouging feature at the bottom of a via opening, and to provide a method of fabricating the same.SOLUTION: The method does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.