ULTIMATE MAGNETIC RANDOM ACCESS MEMORY-BASED TERNARY CAM

摘要

PROBLEM TO BE SOLVED: To provide an ultimate magnetic random access memory-based ternary CAM.SOLUTION: A magnetic random access memory-based ternary content addressable memory cell includes: first and second magnetic tunnel junctions respectively connected to first and second straps extending on each side of the first and second magnetic tunnel junctions; first and second selection transistors respectively connected to one end of the first and second straps; first and second current lines; and a conductive line electrically connecting in series the first and second magnetic tunnel junctions at their ends opposite the ones connecting the first and second straps. The cell has a smaller size and advantageously usable in memory devices having a high cell density array.