| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a magnetic device by using a dry etching so that an etching damage is reduced.SOLUTION: Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers in the device are etched by a mixed gas of hydrogen gas and inert gas, such as Nwith using a mask of non-organic material, such as Ta. As a result, in a studied example, a MTJ taper angle is substantially vertical. |
