<p>Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor (240 of FIG. 18); scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor (245); determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling (250); and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design (255) to generate a stress compensated scaled design of the bipolar transistor (260).</p>
申请公布号
WO2011008359(A2)
申请公布日期
2011.01.20
申请号
WO2010US37149
申请日期
2010.06.03
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;JOSEPH, ALVIN, J.;MALLADI, RAMANA, M.;SLINKMAN, JAMES, A.
发明人
JOSEPH, ALVIN, J.;MALLADI, RAMANA, M.;SLINKMAN, JAMES, A.