发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To overthrow a tradeoff relation that exists between the improvement of a reverse recovery characteristics and the control of leakage current reduction and breakdown. SOLUTION: A diode 10 has a cathode electrode 22, a cathode region 24 formed on the cathode electrode 22, an intermediate semiconductor region 26 formed on the cathode region 24, an anode region 30 formed on the intermediate semiconductor region 26, and an anode electrode 44. The anode region 30 has multiple highly-concentrated subregions 34 and low concentrated subregions 32 scattered in the anode region 30. The anode electrode 22 is not directly in contact with the highly-concentrated subregions 34, but is electrically connected to the highly-concentrated subregions 34 through the low-concentrated subregions 32. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007324428(A) 申请公布日期 2007.12.13
申请号 JP20060154189 申请日期 2006.06.02
申请人 TOYOTA MOTOR CORP 发明人 MISUMI TADASHI
分类号 H01L29/861 主分类号 H01L29/861
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