| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device which can ease high integration, and its manufacturing method. SOLUTION: The magnetic memory device includes linear recording layers 70 which are formed on a substrate 10, and wherein a plurality of regulating areas 52 for regulating the movement of a magnetic wall are formed at specified spacing and areas among the regulating areas 52 become a plurality of recording bits 72. The recording layers 70 includes a first recording layer 46 and a second recording layer 68. The second recording layer is located above the first recording layer, and one end of the second recording layer is connected with one end of the first recording layer. COPYRIGHT: (C)2008,JPO&INPIT
|
