SUBSTRATE PROCESSING METHOD

摘要

Disclosed is a substrate processing method by which a throughput can be improved even when a recovery processing time required to recover the state of a processing chamber is longer than the time required to perform predetermined processing in the processing chamber. Substrates are alternately transferred to two film forming chambers (C, D), and the same film forming processing is performed at the same time to the substrates in the film forming chambers (C, D). When the number of processing substrates in the film forming chamber (C) reaches a predetermined number (i.e., 11), dummy sputter processing is started in the film forming chamber (C), and at the same time, film forming processing is performed by transferring the 23rd-25thsubstrates of a first lot to the film forming chamber (D) until the dummy sputter processing is completed. When the dummy sputter processing is completed in the film forming chamber (C), dummy sputter processing is started in the film forming chamber (D), and at the same time, film forming processing is performed by transferring the first to the third substrates of a second lot to the film forming chamber (C) until the dummy sputter processing is completed. When the dummy sputter processing is completed in the film forming chamber (D), the alternate transfer is restarted.