| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of CMISFET equipped with a high dielectric constant gate insulation film and a metal gate electrode.SOLUTION: Gate electrodes GE1, GE2 that are metal gate electrodes are formed on Hf-containing insulation films 4a, 4b that serve as high dielectric constant gate insulation films. The gate electrodes GE1, GE2 each has a multilayer structure that comprises a metal film 7 comprising metal films 7a, 7b, 7c and a silicon film 8 formed on the metal film 7. The metal film 7a in the bottom layer of the metal film 7 comprises a titanium nitride film, a tantalum nitride film, a tungsten nitride film, a titanium carbide film, a tantalum carbide film, or a tungsten carbide film, the metal film 7b comprises a hafnium film, zirconium film, or aluminum film, and the metal film 7c is a film formed of the same kind of material as the metal film 7a. |
