发明名称 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a resist composition which is excellent in adhesion of a resist film to a substrate or the like, and suppresses pattern collapse, and also to provide a resist pattern forming method.SOLUTION: The resist composition contains: a base component (A) the solubility of which in an alkali developer changes by the action of an acid; an acid generator component (B) which generates an acid upon exposure; and an epoxy resin (G). The resist pattern forming method includes the steps of: forming a resist film on a support by using the resist composition; exposing it; and alkali developing it to form a resist pattern.
申请公布号 JP2011013502(A) 申请公布日期 2011.01.20
申请号 JP20090158145 申请日期 2009.07.02
申请人 TOKYO OHKA KOGYO CO LTD 发明人 HIRANO ISAO;NAMITO TOSHIAKI
分类号 G03F7/039;C08F20/10;C08G59/20;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址