NITRIDE SEMICONDUCTOR ELEMENT, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor element capable of improving luminous efficiency and a yield by improving an EL emission pattern and surface morphology (flatness).SOLUTION: The nitride semiconductor laser element 100 (nitride semiconductor chip) includes a GaN substrate 10 having a principal growth plane 10a, and respective nitride semiconductor layers 12-18 formed on the principal growth plane 10a of the GaN substrate 10. The principal growth plane 10a includes a plane having an off-angle in the a-axis direction with respect to the m plane, and the nitride semiconductor layers 12-18 each include a lower clad layer 12 formed of AlGaN. The lower clad layer 12 is formed to contact the principal growth plane 10a of the GaN substrate 10.