| 摘要 |
PROBLEM TO BE SOLVED: To improve a write-in property of a MONOS type nonvolatile memory cell.SOLUTION: The nonvolatile semiconductor memory device includes an element separation insulating film ST1 extended to a first direction and separating a semiconductor substrate 1 into a plurality of element regions, a plurality of word lines extended to a second direction crossing to a first direction, a memory cell string including a plurality of memory cells connected on the element regions, a bit line contact connected to one end of the memory cell string through a selection gate transistor, and a source line contact connected to the other end of the memory cell string through the selection gate transistor; a memory cell 4 has a tunnel insulating film 41 formed on the semiconductor substrate 1, a charge storing layer 42 formed on the tunnel insulating film 41 and including an insulating film, and gate electrode 44 formed on the charge storing layer 42 and connected to the word line, wherein large auxiliary voltage being larger than pass voltage is applied to a first adjacent word line out of first and second adjacent word lines adjacent to a selection word line during write-in. |
