<p>A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.</p>
申请公布号
WO2011008614(A1)
申请公布日期
2011.01.20
申请号
WO2010US41296
申请日期
2010.07.08
申请人
SEAGATE TECHNOLOGY LLC;XI, HAIWEN;KHOUEIR, ANTOINE;LEE, BRIAN;RYAN, PATRICK;TANG, MICHAEL;JIN, INSIK;ANDERSON, PAUL
发明人
XI, HAIWEN;KHOUEIR, ANTOINE;LEE, BRIAN;RYAN, PATRICK;JIN, INSIK;ANDERSON, PAUL