| 摘要 |
The method involves obtaining a substrate comprising a semiconductor support (1), a continuous insulating layer (2) formed on the support and a superficial semiconductor layer (3) positioned on the insulating layer, where the insulating layer is made of silicon oxide. The insulating layer and the superficial layer are transformed in a selected region (4) of the substrate to form an exposed massive semiconductor region (12) of the substrate. Electronic devices (6) e.g. memory devices and logic devices, are simultaneously formed in or on the exposed region and the superficial layer. An independent claim is also included for a semiconductor structure comprising a substrate. |
