发明名称 FLASH MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a flash memory capable of transferring data of a plurality of pages within a short time in a memory that uses a multi-value technology.SOLUTION: The flash memory includes: a memory cell array including a plurality of memory cells each for storing data of n bits (n is an integer of 2 or more); a plurality of word lines connected to the gates of the memory cells; a plurality of bit lines connected to the memory cells; a sense amplifier for detecting data stored in the memory cells via the bit lines; a data latch of m×n bits for storing the data of n bits stored in each of m (m is an integer of 2 or more) pieces of memory cells connected to a certain word line; and a multilevel interface capable of simultaneously transferring data of 2 bits or more from the data latch to the outside.
申请公布号 JP2011014195(A) 申请公布日期 2011.01.20
申请号 JP20090157560 申请日期 2009.07.02
申请人 TOSHIBA CORP 发明人 FUKUDA KOICHI
分类号 G11C16/06;G11C16/02;H03K17/30 主分类号 G11C16/06
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