| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of manufacturing a polycrystal silicon film improved in performance and quality by adjusting a laser power in a laser treatment process performing crystallization from an amorphous silicon film to a polycrystal silicon film to an optimum value, and to provide a semiconductor inspection apparatus.SOLUTION: In a laser treatment process 13, a laser treatment is carried out at a different place by a different laser power on a monitor substrate extracted among substrates treated in a SPC process 12, and after a polycrystal silicon film is formed over the whole substrate, a polycrystal silicon film which is different in a quality of film formed on the monitor substrate in the optimum power inspection extraction process 14 is measured by an inspection device to obtain the optimum value of the laser power, and a laser adjusted to the optimum laser power is radiated on the substrate surface after the following SPC process treatment in the laser treatment process 13, and a polycrystal silicon film of a high quality can be manufactured in the whole area of substrate. |
