| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound hardly oxidatively deteriorated in order to eliminate a problem wherein the kind of n-type driving organic semiconductor materials is extremely less than that of p-type driving organic semiconductor materials in the same conditions, when a metal having a large work function, such as gold for electrodes is used, while the organic semiconductors can be classified into the p-type driving organic semiconductor materials whose main carriers are holes and the n-type driving organic semiconductor materials whose main carriers are electrons.SOLUTION: This organic semiconductor material hardly causing oxidative deterioration of a new skeleton is characterized by including a sulfone structure. Namely, a compound characterized by a sulfone structure represented by formula (1). Here, substituents Rto Rcontain each independently H and at least one of a deuterium atom, halogen atom, aryl, a heterocyclic group, alkyl, alkenyl, alkynyl, alkoxy, carbonyl, ester, amide, imino, sulfide, sulfoxide, sulfonyl, silyl, carboxy, hydroxy, nitro, nitrile and mercapto. |
