| 摘要 |
PROBLEM TO BE SOLVED: To provide a TMR (Tunnel Magnetic-Resistance effect) element suppressing mixing of particles in etching a magnetic material layer or a diamagnetic material layer and high in performance.SOLUTION: The total number of carbon atoms Cn and the total number of oxygen atoms On in a mixed gas of at least one compound gas selected from a group of compound gases consisting of gases of hydrocarbons, alcohols, ethers, aldehydes, carboxylic acids, esters and geons with oxygen gas meets a relation On/Cn>1 and the magnetic material layer or the diamagnetic material layer is etched in a plasma atmosphere formed with the mixed gas. |
