发明名称 |
PLASMA PROCESSING CHAMBER WITH ENHANCED GAS DELIVERY |
摘要 |
A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate. |
申请公布号 |
WO2011008703(A2) |
申请公布日期 |
2011.01.20 |
申请号 |
WO2010US41729 |
申请日期 |
2010.07.12 |
申请人 |
APPLIED MATERIALS, INC.;KUTNEY, MICHAEL CHARLES;LINDLEY, ROGER ALAN |
发明人 |
KUTNEY, MICHAEL CHARLES;LINDLEY, ROGER ALAN |
分类号 |
H01L21/3065;H05H1/42 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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