发明名称 PLASMA PROCESSING CHAMBER WITH ENHANCED GAS DELIVERY
摘要 A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate.
申请公布号 WO2011008703(A2) 申请公布日期 2011.01.20
申请号 WO2010US41729 申请日期 2010.07.12
申请人 APPLIED MATERIALS, INC.;KUTNEY, MICHAEL CHARLES;LINDLEY, ROGER ALAN 发明人 KUTNEY, MICHAEL CHARLES;LINDLEY, ROGER ALAN
分类号 H01L21/3065;H05H1/42 主分类号 H01L21/3065
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