METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A method for fabricating a nitride semiconductor light emitting device is provided to embody an active layer with high light emitting efficiency by using a hydrazine-based nitrogen precursor like HDMHy in growing an active layer of a quantum well structure including In. An n-type nitride semiconductor layer is formed on a substrate. An active layer is formed on the n-type nitride semiconductor layer by using a hydrazine-based source as a nitrogen precursor and nitrogen gas as carrier gas. A p-type nitride semiconductor layer is formed on the active layer. The p-type nitride semiconductor layer and the active layer are partially mesa-etched to expose a part of the n-type nitride semiconductor layer. A p-type electrode and an n-type electrode are formed on the p-type nitride semiconductor layer and the exposed n-type nitride semiconductor layer, respectively. In the step for forming the active layer, hydrogen gas is further included in the nitrogen gas as the carrier layer. Before the p-type electrode is formed on the p-type nitride semiconductor layer, a p-type contact layer and a transparent electrode can sequentially be formed on the p-type nitride semiconductor layer.