| 摘要 |
<p>An NVM(non-volatile memory) device is provided to form a channel layer without causing etch damage in forming a channel layer by an etch process by epitaxially growing a sacrificial single crystal layer pattern and by forming a channel layer on the sidewall of the sacrificial single crystal layer pattern. A semiconductor substrate(102) has a protrusion extending in a first direction. An isolation layer(110a) extends in the first direction, formed at both sides of the protrusion. A pair of channel layers(108a) are formed on the protrusion, extending in the first direction and confronting each other. An ONO(oxide nitride oxide) layer pattern(114a) is formed on the isolation layer and the sidewall of the channel layer, extending in a second direction vertical to the first direction. A conductive layer pattern(116a) is formed on the ONO layer pattern, extending in the second direction. Spacers(118a) can be formed on the sidewall of the conductive layer pattern. An insulation layer(120) can be formed on the protrusion, the isolation layer, the channel layer, the space and the conductive layer pattern.</p> |
