METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE

摘要

A method for fabricating an NVM(non-volatile memory) device is provided to increase a threshold voltage window of an NVM device by sufficiently avoiding formation of an undesired layer between a charge trapping layer and a blocking layer by a heat treatment. A tunnel insulation layer(102) is formed on a substrate(100) having a channel region. A charge trapping layer for trapping electrons from the channel region is formed on the tunnel insulation layer, including silicon nitride. A heat treatment is performed on the charge trapping layer at a temperature of 1000-1250 ‹C to densify the charge trapping layer. A blocking layer(108) is formed on the heat-treated charge trapping layer(106). A conductive layer is formed on the blocking layer. The conductive layer, the blocking layer, the charge trapping layer and the tunnel insulation layer are patterned to form a gate structure on the channel region. The blocking layer can include an oxide. The blocking layer can include a metal oxide having a higher dielectric constant than that of a silicon nitride.