发明名称 |
METHODS OF MANUFACTURE OF VERTICAL NANOWIRE FET DEVICES |
摘要 |
A vertical Field Effect Transistor (FET) comprising a vertical semiconductor nanowire is formed by the following steps. Create a columnar pore in a bottom dielectric layer formed on a bottom electrode. Fill the columnar pore by plating a vertical semiconductor nanowire having a bottom end contacting the bottom electrode. The semiconductor nanowire forms an FET device with a FET channel region between a source region and a drain region formed in distal ends of the vertical semiconductor nanowire. Form a gate dielectric layer around the channel region of the vertical semiconductor nanowire and then form a gate electrode around the gate dielectric layer. Form a top electrode contacting a top end of the vertical semiconductor nanowire.
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申请公布号 |
US2011012085(A1) |
申请公布日期 |
2011.01.20 |
申请号 |
US20070860459 |
申请日期 |
2007.09.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DELIGIANNI HARIKLIA;HUANG QIANG;ROMANKIW LUBOMYR T. |
分类号 |
H01L29/775;H01L21/336 |
主分类号 |
H01L29/775 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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