发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE |
摘要 |
An object is to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide, and another object is to provide a semiconductor device using silicon carbide. A semiconductor substrate is manufactured through the steps of: adding ions to a silicon carbide substrate to form an embrittlement region in the silicon carbide substrate; bonding the silicon carbide substrate to a base substrate with insulating layers interposed therebetween; heating the silicon carbide substrate and separating the silicon carbide substrate at the embrittlement region to form a silicon carbide layer over the base substrate with the insulating layers interposed between therebetween; and performing heat treatment on the silicon carbide layer at a temperature of 1000° C. to 1300° C. to reduce defects of the silicon carbide layer. A semiconductor device is manufactured using the semiconductor substrate formed as described above. |
申请公布号 |
US2011012131(A1) |
申请公布日期 |
2011.01.20 |
申请号 |
US20100831399 |
申请日期 |
2010.07.07 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L29/78;H01L21/762;H01L29/24 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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