<p>Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.</p>
申请公布号
WO2011008330(A1)
申请公布日期
2011.01.20
申请号
WO2010US34755
申请日期
2010.05.13
申请人
INTEL CORPORATION;MORSE, MICHAEL T.;PANICCIA, MARIO J.;DOSUNMU, OLUFEMI
发明人
MORSE, MICHAEL T.;PANICCIA, MARIO J.;DOSUNMU, OLUFEMI