FILM-FORMING APPARATUS AND FILM-FORMING METHOD

摘要

Disclosed is a film-forming apparatus (1) which comprises: a chamber (2) that has an internal space in which both an object to be processed (W) that has a film formation surface and a target (3) that has a sputtering surface (3a) are arranged in such a manner that the object to be processed (W) and the target (3) face each other; an exhaust unit for reducing the pressure within the chamber (2); a first magnetic field-generating unit (4) for generating a magnetic field in the internal space where the sputtering surface (3a) is exposed; a direct current power supply (9) for applying a negative direct current voltage to the target (3); a gas-introducing unit (11) for introducing a sputtering gas into the chamber (2); and a second magnetic field-generating unit (13) which comprises a first generation part (13u) that is arranged in the vicinity of the target (3) and applied with a current value that is defined as Iu and a second generation part (13d) that is arranged in the vicinity of the object to be processed and applied with a current value that is defined as Id, and which generates a vertical magnetic field so that vertical magnetic field lines pass between the entire sputtering surface (3a) and the entire film formation surface of the object to be processed (W) at a predetermined interval by applying electric currents to the first generation part (13u) and the second generation part (13d) so that the relation Id < Iu is satisfied.