发明名称 ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an electrode plate for a plasma processing apparatus, that can improve in-plane uniformity of plasma processing by reducing a temperature difference between a center part and an outer peripheral part of the electrode plate.SOLUTION: A plurality of gas passage holes 11 penetrating the electrode plate along its thickness are formed, and groove-shaped or spot-shaped recessed parts 21A to 21F are formed dispersedly in an in-plane direction of a back of the electrode plate while avoiding those gas passage holes 11, the occupation volume of the recessed parts 21A to 21F per unit volume of the electrode plate 3 being larger at the outer peripheral part of the electrode plate 3 than at the center part.
申请公布号 JP2011014720(A) 申请公布日期 2011.01.20
申请号 JP20090157663 申请日期 2009.07.02
申请人 MITSUBISHI MATERIALS CORP 发明人 YAMADA OSAMU;YONEHISA TAKASHI
分类号 H01L21/3065;H01L21/31 主分类号 H01L21/3065
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