| 摘要 |
PROBLEM TO BE SOLVED: To allow a process line for a semiconductor wafer having a diameter of 300 mm to process a semiconductor wafer having a diameter smaller than 300 mm.SOLUTION: An upper surface side of a semiconductor wafer 23 for transfer composed of a mere silicon substrate having a diameter of 300 mm is ground substantially to a half of its thickness to be removed. A semiconductor wafer 21 which has a diameter of 200 mm and also has an integrated circuit on an upper surface of the semiconductor wafer 23 for transfer is fixed directly on an upper surface of the semiconductor wafer for transfer. In this case, the semiconductor wafer 21 has its lower surface side ground to be thinner. In the fixation state, the total thickness of the semiconductor wafer 23 for transfer and the semiconductor wafer 21 is substantially equal to the starting thickness of the semiconductor wafer 23 for transfer. Consequently, the semiconductor wafer 21 having the diameter of 200 mm can be processed through the process line for the semiconductor wafer having the diameter of 300 mm. |
