发明名称 Method and apparatus for semiconductor device and semiconductor memory device
摘要 A method comprises providing a first conductive region, arranging a second conductive region adjacent to and insulated from the first conductive region by a dielectric region, arranging a third region adjacent to and insulated from the second conductive region, and adjusting mechanical stress to at least one of the first conductive region and the second conductive region.
申请公布号 US2008070390(A1) 申请公布日期 2008.03.20
申请号 US20070980154 申请日期 2007.10.30
申请人 WANG CHIH-HSIN 发明人 WANG CHIH-HSIN
分类号 H01L21/425;H01L21/8247;H01L27/115;H01L29/423;H01L29/788 主分类号 H01L21/425
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