| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving an yield and productivity.SOLUTION: The method for manufacturing the semiconductor device includes steps for forming an inspection pattern 37 and a semiconductor chip 11 on a semiconductor substrate 35, forming a photosensitive resist film 41 on an inspection terminal connection surface 39A, a connection surface 23A of an electrode pad 23, and a protective film 25, exposing the photosensitive resist film 41 through a mask (not shown), forming a through-groove 43 having a width wider than those of the inspection pattern 37 and a cutting region C on the photosensitive resist film 41 by development, removing the inspection pattern 37 by wet blast processing through the photosensitive resist film 41, and collectively forming a groove 51 on a protective film 25 in a part facing the through-groove 43 and on the semiconductor substrate 35 in a part facing the through-groove 51. |
