METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To suppress oxidation of a metal film as a base during formation of a high permittivity insulating film.SOLUTION: A method of manufacturing a semiconductor device includes the processes of forming an aluminum-containing insulation film on an electrode film formed on a substrate surface by alternately repeating a process of supplying an aluminum precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminum precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; forming the high permittivity insulation film different from the aluminum-containing insulation film on the aluminum-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber; and performing heat treatment on the substrate where the high permittivity insulation film is formed.