| 摘要 |
PROBLEM TO BE SOLVED: To provide a means to measure the thickness of an epitaxial layer formed on a substrate without depending on substrate resistivity, and polished after the epitaxial layer is formed; and to provide an epitaxial wafer guaranteeing the thickness of the epitaxial layer of a product wafer by the means.SOLUTION: The method for measuring the film thickness of the epitaxial layer in the manufacturing step of the epitaxial wafer includes forming the epitaxial layer on the surface of a semiconductor wafer by subjecting the semiconductor wafer to the epitaxial growth process. The method includes measuring the thickness A of the semiconductor wafer before the epitaxial growth step, polishing the epitaxial layer formed on the surface of the semiconductor wafer after the epitaxial growth step, measuring the thickness B of the epitaxial wafer obtained after polishing, and computing the thickness of the epitaxial layer as a difference (B-A) between the thickness B and the thickness A. The thickness A and the thickness B are measured by a contactless displacement measuring meter. |
