| 摘要 |
PROBLEM TO BE SOLVED: To prevent a partial concentration of electric field in an active region.SOLUTION: A semiconductor device is equipped with a first diffusion region and a second diffusion region that are formed in an active region surrounded by an isolation insulating region (6); a groove-shaped trench region formed between the first diffusion region and the second diffusion region; a gate insulating film (10) formed on the trench region; a gate electrode (11) so formed on the gate insulating film as to let the trench region be embedded in the gate electrode; and a protective insulating film (4), formed in a region located on the upper layer side of a region sandwiched between the gate insulating film and the isolation insulating region. |
