发明名称 High-Gain Wide Bandgap Darlington Transistors and Related Methods of Fabrication
摘要 A packaged power electronic device includes a wide bandgap bipolar driver transistor having a base, a collector, and an emitter terminal, and a wide bandgap bipolar output transistor having a base, a collector, and an emitter terminal. The collector terminal of the output transistor is coupled to the collector terminal of the driver transistor, and the base terminal of the output transistor is coupled to the emitter terminal of the driver transistor to provide a Darlington pair. An area of the output transistor is at least 3 times greater than an area of the driver transistor in plan view. For example, an area ratio of the output transistor to the driver transistor may be between about 3:1 to about 5:1. Related devices and methods of fabrication are also discussed.
申请公布号 US2011012129(A1) 申请公布日期 2011.01.20
申请号 US20090503386 申请日期 2009.07.15
申请人 ZHANG QINGCHUN;AGARWAL ANANT K 发明人 ZHANG QINGCHUN;AGARWAL ANANT K.
分类号 H01L29/24;H01L21/331;H01L29/73 主分类号 H01L29/24
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