发明名称 SEMICONDUCTOR DEVICE WITH CAPACITOR AND METHOD OF FABRICATING THE SAME
摘要 A capacitor, comprising a substrate, a first electrode and a second electrode is provided. The first electrode is located over a substrate. The second electrode is located over the first electrode and overlapping with a portion of the first electrode. The dielectric layer is located between the first electrode and the second electrode and a portion of the first electrode, a portion of the dielectric layer and a portion of the second electrode, which overlap each other, are together form the capacitor. The first electrode is electrically connected to a first metal interconnects, the second electrode is electrically connected to a second metal interconnects underneath the second electrode and no via for being electrically connected to the second electrode is located over the second electrode.
申请公布号 US2011012229(A1) 申请公布日期 2011.01.20
申请号 US20090502364 申请日期 2009.07.14
申请人 UNITED MICROELECTRONICS CORP. 发明人 HSU CHUN-CHEN
分类号 H01L29/92;H01G4/228;H01L21/02 主分类号 H01L29/92
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