| 摘要 |
<p>PURPOSE: A photoresist composition containing salts is provided to obtain a photoresist pattern with excellent resolution, LER and focus margin and to enable use for ArF excimer laser lithography, KrF excimer laser lithography, and ArF excimer lithography. CONSTITUTION: A salt is represented by the formula (I-Pa), wherein Xpa represents a single bond or a C1-C4 alkylene group; Rpa represents a single bond, a C4-C36 divalent alicyclic hydrocarbon group or a C6-C36 divalent aromatic hydrocarbon group, and one or more methylene groups in the divalent alicyclic hydrocarbon group can be replaced by -O- or -CO-; Ypa represents a polymerizable group; and Zpa+ represents an organic cation.</p> |
