发明名称 |
CAPACITIVE HIGH TEMPERATURE PRESSURE SENSOR AND FABRICATION METHOD THEREOF |
摘要 |
PURPOSE: A capacitive high temperature pressure sensor and a manufacturing method thereof are provided to linearly change output according to input as a surface of capacitive high temperature pressure sensor is changed by external pressure. CONSTITUTION: A manufacturing method of capacitive high temperature pressure sensor is as follows. A first silicon carbide(120) and a second silicon carbide(220) is respectively evaporated on upper part of a first silicon wafer(110) and a second silicon wafer. A low silicon oxide film is evaporated on the first silicon carbide. A first PSG film(140) and second PSG film(240) is formed by respectively evaporating PSG on upper part of a low silicon oxide film and a second silicon carbide. A predetermined depth groove(150) is etched in one side of upper surface of the first PSG film and the low silicon oxide film. The first PSG film and the second PSG film are combined after facing each other.
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申请公布号 |
KR20110005966(A) |
申请公布日期 |
2011.01.20 |
申请号 |
KR20090063362 |
申请日期 |
2009.07.13 |
申请人 |
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE |
发明人 |
CHOI, IN MOOK;WOO, SAM YONG;KIM, YONG GYOO |
分类号 |
G01L9/12;H01L21/02;H01L21/20;H01L21/205 |
主分类号 |
G01L9/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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