发明名称 CAPACITIVE HIGH TEMPERATURE PRESSURE SENSOR AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A capacitive high temperature pressure sensor and a manufacturing method thereof are provided to linearly change output according to input as a surface of capacitive high temperature pressure sensor is changed by external pressure. CONSTITUTION: A manufacturing method of capacitive high temperature pressure sensor is as follows. A first silicon carbide(120) and a second silicon carbide(220) is respectively evaporated on upper part of a first silicon wafer(110) and a second silicon wafer. A low silicon oxide film is evaporated on the first silicon carbide. A first PSG film(140) and second PSG film(240) is formed by respectively evaporating PSG on upper part of a low silicon oxide film and a second silicon carbide. A predetermined depth groove(150) is etched in one side of upper surface of the first PSG film and the low silicon oxide film. The first PSG film and the second PSG film are combined after facing each other.
申请公布号 KR20110005966(A) 申请公布日期 2011.01.20
申请号 KR20090063362 申请日期 2009.07.13
申请人 KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE 发明人 CHOI, IN MOOK;WOO, SAM YONG;KIM, YONG GYOO
分类号 G01L9/12;H01L21/02;H01L21/20;H01L21/205 主分类号 G01L9/12
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