发明名称 |
MOSFET WITH INTEGRATED FIELD EFFECT RECTIFIER |
摘要 |
<p>A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25µm technology. Self-aligned processing can be used.</p> |
申请公布号 |
EP2274770(A1) |
申请公布日期 |
2011.01.19 |
申请号 |
EP20090739614 |
申请日期 |
2009.04.28 |
申请人 |
STMICROELECTRONICS N.V. |
发明人 |
ANKOUDINOV, ALEXEI;RODOV, VLADIMIR;CORDELL, RICHARD |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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