| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic memory element and to provide a method of manufacturing it. SOLUTION: An organic memory element includes an organic memory layer between a first electrode and a second electrode, wherein a metal nanoparticle layer is included between the first electrode and the organic memory layer. Further, the method of manufacturing the organic memory element is provided. In the organic memory element, since the memory element can be driven by using a positive voltage, characteristics of high integration, ultra high-speed, high capacity, reduced power consumption and low cost, etc. are realized by providing a passive matrix by utilizing a 1D1R structure including a single diode and a single resistor. COPYRIGHT: (C)2008,JPO&INPIT
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