| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device provided with a silicon oxide film preventing penetration of water, and a manufacturing method thereof. SOLUTION: On a silicon substrate 1, a gate insulating film 6, a floating gate electrode film 7, an inter-electrode insulating film 8 such as an ONO film and a NONON film, a control gate electrode film 9, and a hard mask material 10 for processing are stacked, and etching processing is carried out to form gate electrodes MG. The gate electrodes are buried in a silicon oxide film 11 up to a top-surface position of the floating gate electrode film 7, and a silicon oxide film (SiBN) 12 which contains boron and has small specific inductive capacity is formed thereupon. A silicon oxide film 13 is formed thereupon. With this constitution, the silicon oxide film 12 prevents penetration of water, and is not disposed between the floating gate electrode film 7 and control gate electrode film 9 and has the small specific inductive capacity to suppress an increase in parasitic capacity. COPYRIGHT: (C)2008,JPO&INPIT
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