| 发明名称 |
PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL AND PROCESS FOR PRODUCING EPITAXIAL WAFER |
| 摘要 |
<p>Si (l-v-w-x) C w Al x N v crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si (l-v-w-x) C w Al x N v substrate, a method for manufacturing an epitaxial wafer, a Si (l-v-w-x) C w Al x N v substrate, and an epitaxial wafer are provided. A method for manufacturing a Si (l-v-w-x) C w Al x N v substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si (l-v-w-x) C w Al x N v layer 12 (0 < v <1,0<w<1,0<x<1,and0<v+w+x<1) is then grown on the Si substrate 11 by a pulsed laser deposition method.</p> |
| 申请公布号 |
EP2276060(A1) |
申请公布日期 |
2011.01.19 |
| 申请号 |
EP20090733673 |
申请日期 |
2009.04.17 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SATOH, ISSEI;MIYANAGA, MICHIMASA;FUJIWARA, SHINSUKE;NAKAHATA, HIDEAKI |
| 分类号 |
C30B29/38;C23C14/06;C23C14/28;C30B23/02;C30B23/08;C30B25/02;C30B29/36;C30B29/40;H01L21/02;H01L29/267 |
主分类号 |
C30B29/38 |
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