PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNV BASE MATERIAL, AND EPITAXIAL WAFER& xA;

摘要

There are provided a Si (l-v-w-x) C w Al x N v substrate that achieves high crystallinity and low costs, an epitaxial wafer, and manufacturing methods thereof. A method for manufacturing a Si (l-v-w-x) C w Al x N v substrate according to the present invention includes the steps of preparing a different type of substrate 11 and growing a Si (l-v-w-x) C w Al x N v layer having a main surface on the different type of substrate 11. The component ratio x + v at the main surface of the Si (l-v-w-x) C w Al x N v layer is 0 < x + v < 1. The component ratio x + v increases or decreases monotonically from the interface between the Si (l-v-w-x) C w Al x N v layer and the different type of substrate 11 to the main surface of the Si (l-v-w-x) C w Al x N v layer. The component ratio x + v at the interface between the Si (l-v-w-x) C w Al x N v layer and the different type of substrate 11 is closer to that of the material of the different type of substrate 11 than the component ratio x + v at the main surface of the Si (l-v-w-x) C w Al x N v layer.