| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for analyzing metal impurities of a silicon wafer, analyzing impurities in the silicon wafer of one sheet, without any introduction of contamination from the outside with excellently high sensitivity and in a short time, which is a pre-treatment method for measuring metal impurities at an arbitrary depth at an arbitrary place of the silicon wafer surface of one sheet. SOLUTION: In the method for analyzing impurities, the impurities are analyzed by measuring a volume of sucked recovered solution with a hydrofluoric acid applied from pores of the silicon wafer of one sheet treated by a pre-treatment technology in which homogeneous pores are formed to the depth direction of the silicon wafer by using a wet chemical etching solution method called as an electroless deposition method, and by analyzing by an inductive coupled plasma mass spectrometry or an ICP mass spectrometry. COPYRIGHT: (C)2009,JPO&INPIT
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