SEMICONDUCTOR PRESSURE SENSOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor which does not introduce temperature hysteresis between ambient temperature and a sensor output even when a chip size is reduced while a circuit pattern of the same diaphragm diameter and the same design rule is maintained. SOLUTION: The semiconductor pressure sensor includes: a sensor area 11a which has a thin-film diaphragm 12a formed by a recessed part provided at the central part of one surface of a p-type semiconductor substrate 13a and includes a pressure gauge 14a which is a p-type area formed in an N-type island area formed on the other surface facing the diaphragm 12a; and a circuit area 10a which is formed in the semiconductor substrate 13a outside the sensor area 11a and includes a circuit for amplifying an electric signal obtained by converting external pressure received by the diaphragm. The circuit area 10a extends within the other surface which is outside the sensor area and faces the diaphragm 12a. COPYRIGHT: (C)2009,JPO&INPIT